1

On the reaction mechanism of GaAs MOCVD

Year:
1990
Language:
english
File:
PDF, 319 KB
english, 1990
8

Photoassisted deposition process

Year:
1988
Language:
english
File:
PDF, 524 KB
english, 1988
9

Molecular layer epitaxy of GaAs

Year:
1993
Language:
english
File:
PDF, 510 KB
english, 1993
10

Surface reaction mechanism in MOCVD

Year:
1996
Language:
english
File:
PDF, 682 KB
english, 1996
14

Stoichiometry control and point defects in compound semiconductors

Year:
2000
Language:
english
File:
PDF, 1.10 MB
english, 2000
25

Photocapacitance (PHCAP) Investigation of Proton Irradiated Si-PIN Diodes

Year:
1991
Language:
english
File:
PDF, 461 KB
english, 1991
47

Layer growth in silicon epitaxy

Year:
1972
Language:
english
File:
PDF, 854 KB
english, 1972
48

Silicon epitaxial growth

Year:
1972
Language:
english
File:
PDF, 1.39 MB
english, 1972
49

Surface morphology of GaAs grown by vapor phase epitaxy

Year:
1979
Language:
english
File:
PDF, 1.14 MB
english, 1979
50

Silicon vapor phase epitaxy

Year:
1982
Language:
english
File:
PDF, 840 KB
english, 1982